 phone: +39.031.3327356 -7358 fax: +39.031.3327617 email: monica.bollani@ifn.cnr.it address: L-NESS laboratory, via Anzani 42, 22100 Como, Itlay http://lness.como.polimi.it/monicabollani.php Position: Researcher Education: Born in Italy on December 21, 1973, Monica Bollani graduated in chemistry in 1997 at the Università degli Studi di
Milano with 109/110, defending an experimental thesis on self-assembled organic
monolayer systems on silicon surfaces. She obtained a European PhD degree in November 2000 in Materials Physics from the
University of Aix-Marseille III (France) with a “very honorable” mention. The
subject of the European PhD thesis concerned microscopic and spectroscopic
analysis of self-assembled sensors on silicon for applications in
opto-nanoelectronics. A four-year post-doc position
for a research
activity related to the growth of semiconductors and microscopy caracherizations was carried out partly in Zurich (ETH) and partly at
the L-NESS (Politecnico) in Como. Since May 2006 she has been part
of the optical and electron-beam lithography group, mainly dedicated to
nanostructurization of low-dimensional systems (field-effect transistors and
diodes) and to the patterning on Si and Ge substrates for the growth of regular
arrays of three-dimensional islands or nanometer-scale mesa structures. In February 2009 she was appointed permanent researcher in CNR, at the Milano branch of the Institute of Photonics
and Nanotechnology (IFN). The main work site is currently the L-NESS. She holds 70+ publications in international peer-reviewed journals. Laboratories:
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