 fax: +39.031.3327617 email: alexey.fedorov@como.polimi.it address: L-NESS laboratory, via Anzani 42, 22100 Como, Itlay http://lness.como.polimi.it/alexeyfedorov.php Alexey Fedorov graduated in Physics (June 1985) at Physical Faculty of the Novosibirsk State University (Russia). He has research position in the Institute of Semiconductor Physics, Russian Academy of Science (Novosibirsk, Russia) during a period of 1985-2003 years. His activity was in the studying of the growth process in molecular beam epitaxy of III-V semiconductors and X-ray diffraction and topography. He holds a PhD degree in Physics (February 2003) from the Institute of Semiconductor Physics (Novosibirsk, Russia). In 2003 he joined the research L-NEES laboratory (Como, Italy). Since November 2004 he is a CNR physics researcher at the L-NESS laboratory in the area of the MBE growth of the III-V semiconductors on Ge/Si virtual substrates. In 2010 he joined the Institute for Photonics and Nanotechnologies (IFN-CNR, Milan, Italy). His research activity last years is the growth of the GaAs nanostructures by droplet epitaxy in collaboration with Università di Milano Bicocca ( Milan, Italy). |
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